In the beginning of production of solar cells wafers must be marked to control and evaluate each cell on each process step. It might be combination of numbers or letters, or a barcode. Inscription must be seen without problems at any step in manufacturing process. Nanosecond laser usually is used.

Selective dielectrical layer (SiNx) removal on the emitter side of the wafers is being done with femtosecond pulses. SiNx layer that is 50-90 nm thickness and covers emitter, must be precisely removed without harming emitter layer. One of applications is while ablation of dielectric, openings for bus bars (A) and fingers (B) are being created.

While manufacturing crystalline solar cells where p type electrical conductivity wafers are used, n type layers are formed by diffusion of phosphorus. This n type layer is formed on top surface of the cell and called emitter. Also p-n junction is formed. When edges are not isolated parasitical edge current reduces efficiency of the cell.

On the back side of the crystalline wafer there are thin dielectric layer covered with aluminum layer. It is possible to have omic contact on the back side of the cell while aluminum is being fired with laser pulses and penetrates thru dielectric layer to the silicon. For this application nanosecond lasers are used mostly.