for Two-Photon Polymerization Workshop of Photonics together with an associate laboratory in Vilnius University performs Femtosecond Laser Multiphoton Polymerization research and small-scale production of 3D nano/microstructures on scientific and industrial request. Two photon or multi-photon photopolymerization is a direct laser writing technique for sculpting three-dimensional micro-structures with nano-scale resolution. This technology is based on polymerization of a photosensitive material; combined with femtosecond laser pulses enables microfabrication with resolution beyond the diffraction limit!
On Optical Fiber. Two photon polymerization or multiphoton polymerization technique is used for micro-structuring of photo-polymers in 3D over a large area in order to produce micro optics and integrated components with resolution from 100 nm to 20 μm.
Our laboratory FemtoLab femtosecond laser microfabrication system can drill various profile holes (10 μm – 100 μm) in single mode and multimode optical fibers.
Precise micro holes drilling (down to 1 µm diameter).
Sapphire (or any other transparent dielectric) surface or bulk 2D/3D micro patterning.
Selective dielectrical layer (SiNx) removal on the emitter side of the wafers is being done with femtosecond pulses. SiNx layer that is 50-90 nm thickness and covers emitter, must be precisely removed without harming emitter layer. One of applications is while ablation of dielectric, openings for bus bars (A) and fingers (B) are being created.
While manufacturing crystalline solar cells where p type electrical conductivity wafers are used, n type layers are formed by diffusion of phosphorus. This n type layer is formed on top surface of the cell and called emitter. Also p-n junction is formed. When edges are not isolated parasitical edge current reduces efficiency of the cell.
On the back side of the crystalline wafer there are thin dielectric layer covered with aluminum layer. It is possible to have omic contact on the back side of the cell while aluminum is being fired with laser pulses and penetrates thru dielectric layer to the silicon. For this application nanosecond lasers are used mostly.
